ESD protection circuit and semiconductor device
US8536680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2009 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Aug 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
An electrostatic discharge protection circuit has a bipolar transistor which includes a first diffusion layer of a first conductive type connected with a first power supply and functioning as a base; a second diffusion layer of a second conductive type connected with a second power supply and functioning as a collector; and a third diffusion layer of the second conductive type connected with an input/output pad and functioning as an emitter. An area of a first region of the third diffusion layer which is opposite to the first diffusion layer is larger than an area of a second region of the second diffusion layer which is opposite to the first diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.