Low-voltage bidirectional protection diode
US8536682B2 · kind B2 · utility
3Cited by
20References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 16, 2010 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
Abstract
A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.