Semiconductor device and method for manufacturing the same
US8536691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Nov 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.