Semiconductor structure comprising moisture barrier and conductive redistribution layer
US8536707B2 · kind B2 · utility
5Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.