Black organic light-emitting diode device
US8536781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2012 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | May 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/865
Abstract
The present invention relates to a black organic light-emitting diode that implements a resonant absorbing configuration, the black organic light-emitting diode comprising: a glass substrate; a first metal layer formed on the glass substrate; a first electrode formed on the first metal layer; an organic light-emitting layer formed on the first electrode; a second electrode formed on the organic light-emitting layer, opposite the first electrode; a first interlayer formed on the second electrode; a second metal layer formed on the first interlayer; and a second interlayer formed on the second metal layer, wherein by controlling the thickness of the first interlayer and the second interlayer, external light reflected by the first metal layer and the second electrode destructively interferes with light reflected by the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.