Method for measuring via bottom profile
US8537213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2010 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Dec 27, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95653
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for measuring a via bottom profile is disclosed for obtaining a profile of a bottom of a via in a front side of a substrate. In this method, an infrared (IR) light source is transmitted from the back of the substrate to the bottom of the via through an objective by using an IR-microscope, and lights scattered from the bottom of the via are acquired by an image capturing device to generate an image, where the image displays a diameter (2Ea) of the via bottom profile and a diameter (2Ec) of a maximum receivable base area of the via for the IR-microscope. Thereafter, by using an elliptic equation, a minor axis radius thereof (Eb) is obtained, and thus the via bottom profile is obtained from a radius (Ea) of the via bottom profile and the minor axis radius (Eb) of the elliptic equation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.