Diode chain with guard-band

US8537514B2 · kind B2 · utility

Assignee

• SOFICS BVBA · BE

Inventors

• Benjamin Van Camp · Brugge, BE
• Geert Wybo · Delhi, IN
• Stefaan Verleye · Gistel, BE

Key dates

• Filing date: Feb 8, 2012
• Grant date: Sep 17, 2013
• Expiry date: Mar 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611

Abstract

The present invention provides an ESD protection device having at least one diode in a well of first conductivity type formed in a substrate of second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.