Semiconductor device having floating body type transistor
US8537635B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/711
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a floating body type transistor and first and second circuits. The transistor has a floating body and a source-drain path inserted between first and second circuit nodes. The first circuit supplies a first signal to the gate of the transistor, and the first signal changes between a first logic level that holds the transistor in a non-conductive state and a second logic level that directs the transistor into a conductive state. The second circuit supplies a first voltage level near the second logic level to the first circuit node and supplies a second voltage level near the second logic level to the second circuit node, each as a level in a state where the transistor is not utilized. Thereby the gate capacitance of the transistor can be kept small as viewed from the gate, and high-speed operation and a reduction in consumption current can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.