Patent · US Active

Broad area diode laser with high efficiency and small far-field divergence

US8537869B2 · kind B2 · utility

4Cited by

6References

13Claims

0Family size

Assignee

Forschungsverbund Berlin e.V. · DE

Inventors

Paul Crump · Berlin, DE
Goetz Erbert · Plauen, DE
Hans Wenzel · Santa Ana, US
Joerg Fricke · Berlin, DE

Key dates

Filing date	May 4, 2012
Grant date	Sep 17, 2013
Priority date	—
Expiry date	May 4, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/18
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A broad area laser, with high efficiency and small far-field divergence, has an active layer, a first contact and a second contact, each having a width larger than 10 μm. An anti-wave guiding layer, which is positioned laterally with respect to the active region, is enclosed between the first and second contacts, wherein a refractive index of the anti-wave guiding layer is larger than a minimum refractive index of cladding layers. A minimum distance between the anti-wave guiding layer and a projection of one of the contacts on the plane of the anti-wave guiding layer is between 0 and 100 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.