Patent · US Active

Memory testing system and method of computing device

US8539289B2 · kind B2 · utility

0Cited by
2References
15Claims
0Family size

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Key dates

Filing dateDec 7, 2011
Grant dateSep 17, 2013
Priority date
Expiry dateFeb 10, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/5004
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a memory testing method for testing a memory module of a computing device, an operating voltage of the memory module is adjusted to a first voltage or a second voltage. A predetermined data set is written into the memory module after the operating voltage of the memory module is adjusted, and the written data set is read out from the memory module, to accomplish a data writing and reading process of the memory module. A register value that presents how many memory errors have occurred during the data writing and reading process is acquired from an ECC register of the memory module, to determine whether the memory module is stable during the adjusting of the operating voltage according to the register value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.