Physical vapor deposition with impedance matching network
US8540851B2 · kind B2 · utility
1Cited by
13References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3444
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.