Patent · US Active

Chemical mechanical polishing composition and methods relating thereto

US8540893B2 · kind B2 · utility

0Cited by
6References
9Claims
0Family size

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Key dates

Filing dateAug 4, 2008
Grant dateSep 24, 2013
Priority date
Expiry dateMar 24, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3212
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.