Chemical mechanical polishing composition and methods relating thereto
US8540893B2 · kind B2 · utility
0Cited by
6References
9Claims
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Key dates
| Filing date | Aug 4, 2008 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.