Dielectric stack
US8541273B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2010 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Jun 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a device is disclosed. The method includes providing a substrate and forming a device layer on the substrate having a formed thickness TFD. A capping layer is formed on the substrate having a formed thickness TFC. Forming the capping layer consumes a desired amount of the device layer to cause the thickness of the device layer to be about the target thickness TTD. The thickness of the capping layer is adjusted from TFC to about a target thickness TTC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.