Patent · US Active

Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour

US8541304B2 · kind B2 · utility

0Cited by

2References

22Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Gabriel Pares · Bernin, FR

Key dates

Filing date	Dec 14, 2010
Grant date	Sep 24, 2013
Priority date	—
Expiry date	Dec 14, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing an interconnection structure is disclosed. In one aspect, there is formation in a substrate of at least one trench forming a closed contour and at least one hole situated inside the closed contour, the trench and the hole being separated by a zone of the substrate. Furthermore, the trench is filled with a dielectric material and the hole is filled with a conducting material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.