Ceramic material, member for semiconductor manufacturing equipment, sputtering target member and method for producing ceramic material
US8541328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2012 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | May 23, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9669
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuKα radiation appear at 2θ=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2θ=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.