X-ray detector and fabrication method thereof

US8541750B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Yu-Cheng Chen · Jiaocheng District, CN
• An-Thung Cho · Wanrong, TW
• Ching-Sang Chuang · Sunnyvale, US
• Chia-Tien Peng · Hsinchu, TW

Key dates

• Filing date: Sep 3, 2009
• Grant date: Sep 24, 2013
• Expiry date: Jul 25, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/301

Abstract

A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.