Semiconductor device having stacked structural bodies and method for manufacturing the same

US8541768B2 · kind B2 · utility

Assignee

• HITACHI, LTD. · JP

Inventors

• Akio Shima · Hino, JP
• Yoshitska Sasago · Tachikawa, JP
• Toshiyuki Mine · Fussa, JP
• Masaharu Kinoshita · Tokyo, JP

Key dates

• Filing date: May 28, 2011
• Grant date: Sep 24, 2013
• Expiry date: Jul 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A technique used for a semiconductor device formed by stacking multiple structural bodies each having a semiconductor device, for preventing generation of thermal load on a structural body at a lower layer which is caused by a laser used in a step of forming a structural body at an upper layer. In a phase-change memory including multiple stacked memory matrices, a metal film is disposed between a memory matrix at a lower layer and a memory matrix at an upper layer formed over the memory matrix at the lower layer, in which the laser used for forming the memory matrix is reflected at the metal film and prevented from transmitting the metal film, thereby preventing the phase-change material layer, etc. in the memory matrix at the lower layer from being directly heated excessively by the laser.