Semiconductor device and method for manufacturing same

US8541834B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventor

• Tetsuro Nozu · Tokyo, JP

Key dates

• Filing date: Sep 21, 2011
• Grant date: Sep 24, 2013
• Expiry date: Sep 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/683

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a control electrode, a first main electrode, an internal electrode, and an insulating region. The control electrode is provided inside a trench. The first main electrode is in conduction with the third semiconductor region. The internal electrode is provided in the trench and in conduction with the first main electrode. The insulating region is provided between an inner wall of the trench and the internal electrode. The internal electrode includes a first internal electrode part included in a first region of the trench and a second internal electrode part included in a second region between the first region and the first main electrode. A spacing between the first internal electrode part and the inner wall is wider than a spacing between the second internal electrode part and the inner wall.