Display apparatus using oxide semiconductor and production thereof

US8541944B2 · kind B2 · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Masafumi Sano · Kyoto, JP
• Kenji Takahashi · Kaisei, JP

Key dates

• Filing date: Mar 12, 2012
• Grant date: Sep 24, 2013
• Expiry date: Mar 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/12

Abstract

A transistor includes a source terminal and a drain terminal, an active layer having an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. The gate insulating layer contains hydrogen in an amount of less than 3×1021 atoms/cm3, and an electron carrier concentration of the active layer is less than 1018/cm3.