Patent · US Active

Chemical mechanical polishing composition and method

US8545715B1 · kind B1 · utility

5Cited by
3References
9Claims
0Family size

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Inventors

Key dates

Filing dateOct 9, 2012
Grant dateOct 1, 2013
Priority date—
Expiry dateOct 9, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/7684
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A chemical mechanical polishing composition and method is provided, wherein the low-k dielectric material removal rate remains stable following the polishing of a 110th polished wafer in a plurality of wafers to be polished.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.