Patent · US Active

Thermal interface material with thin transfer film or metallization

US8545987B2 · kind B2 · utility

19Cited by
54References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2007
Grant dateOct 1, 2013
Priority date
Expiry dateSep 12, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31678
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to various aspects, exemplary embodiments are provided of thermal interface material assemblies. In one exemplary embodiment, a thermal interface material assembly generally includes a thermal interface material having a first side and a second side and a metallization layer having a layer thickness of about 0.0005 inches or less. The metallization layer is disposed along at least a portion of the first side of the thermal interface material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.