Forming chalcogenide semiconductor absorbers
US8546176B2 · kind B2 · utility
5Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2010 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.