Patent · US Active

Selective growth of polycrystalline silicon-containing semiconductor material on a silicon-containing semiconductor surface

US8546249B2 · kind B2 · utility

1Cited by

26References

15Claims

0Family size

Assignee

IHP GmbH—Innovations for High Performance · DE

Inventors

Bernd Tillack · Frankfurt (Oder), DE
Bernd Heinemann · Frankfurt, DE
Yuji Yamamoto · Toyota, JP

Key dates

Filing date	Feb 15, 2008
Grant date	Oct 1, 2013
Priority date	—
Expiry date	Feb 15, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02639
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of depositing polycrystalline silicon exclusively on monocrystalline first silicon surface portions of a substrate surface which besides the first surface portions additionally has insulator surface portions, comprising the steps of depositing boron on the first silicon surface portions in an amount which in relation to the first silicon surface portions respectively corresponds to more than a monolayer of boron, and depositing silicon on the first silicon surface portions treated in that way.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.