Patent · US Active

Crystalline silicon based solar cell and method for manufacturing thereof

US8546685B2 · kind B2 · utility

0Cited by
3References
11Claims
0Family size

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Key dates

Filing dateJul 2, 2010
Grant dateOct 1, 2013
Priority date
Expiry dateOct 28, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

Provided is a hetero-junction solar cell with a silicon crystalline substrate of small thickness but exhibiting less warpage, and having a high photoelectric conversion efficiency. The crystalline silicon substrate has a thickness of 50 μm to 200 μm, and has a rough structure on the light-incident-side surface thereof. The surface of the transparent conductive layer in the light incidence side has an irregular structure. The top-bottom distance in the irregular structure of the transparent conductive layer in the light-incidence-side is preferably smaller than the top-bottom distance in the rough structure of the crystalline silicon substrate in the-light-incidence side. The distance between tops of the projections in the irregular structure on the surface of the transparent conductive layer in the light incidence side is preferably smaller than the distance between tops of the projections in the rough structure on the surface of the crystalline silicon substrate in the light incidence side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.