Non-volatile memory device

US8546780B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Jun Iijima · Somalomo, CM
• Yasuyoshi Hyodo · Tokyo, JP
• Akihiro Kajita · Yokohama, JP

Key dates

• Filing date: Feb 8, 2011
• Grant date: Oct 1, 2013
• Expiry date: Dec 5, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

According to one embodiment, a non-volatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, and a variable resistance memory cell which is disposed at an intersection between the first wiring and the second wiring so as to be held between the first wiring and the second wiring and includes a variable resistive element and a rectifying element. In a space between the variable resistance memory cells adjacent to each other, at least a periphery of the variable resistive element is evacuated or filled with a gas.