Semiconductor apparatus manufacturing method and semiconductor apparatus
US8546801B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 2009 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Apr 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor apparatus which may check a state of connection of a penetrating electrode in a semiconductor substrate with ease. A semiconductor apparatus manufacturing method includes: forming in a semiconductor substrate at least three kinds of the through-holes each having a large area, a middle area, and a small area of openings; forming a conductive layer on an inner surface of the at least three kinds of the through-holes having different areas of the openings to form the penetrating electrodes; and measuring resistance values of the penetrating electrode including the through-hole having the large area of the opening and the penetrating electrode including the through-hole having the small area of the opening among the three kinds of the penetrating electrodes to determine states of connection of the penetrating electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.