Semiconductor device
US8546811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.