High temperature strain sensor
US8546817B2 · kind B2 · utility
1Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Feb 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0098
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.