Posts in glue layer for group-III nitride LEDs
US8546829B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Jan 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
Abstract
A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.