Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
US8546863B2 · kind B2 · utility
6Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 17, 2008 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Dec 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory cell, the memory cell comprising a substrate, a nanowire extending along a vertical trench formed in the substrate, a control gate surrounding the nanowire, and a charge storage structure formed between the control gate and the nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.