Semiconductor device
US8546881B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2010 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.