Terminal structure for superjunction device and method of manufacturing the same
US8546882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Mar 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A terminal structure for superjunction device is disclosed. The terminal structure comprises from inside out at least one P type implantation ring and several P type trench rings formed in an N type epitaxial layer to form alternating P type and N type regions. A channel cut-off ring is formed at the border of the device. The P type implantation ring is formed adjacent to the active area of the device and covers at least one trench ring. A terminal dielectric layer is formed to cover the P type implantation ring and the trench rings. A plurality of field plates are formed above the terminal dielectric layer. Methods of manufacturing terminal structure are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.