Semiconductor device
US8546883B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2010 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Sep 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.