Method of reading data in non-volatile memory device, and device thereof
US8547752B2 · kind B2 · utility
5Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Nov 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.