Semiconductor laser element
US8548023B2 · kind B2 · utility
1Cited by
2References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2008 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Dec 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.