Method for manufacturing ferroelectric device
US8551863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/306
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A seed layer having a predetermined pattern is formed on a side of one surface of a second substrate, and a ferroelectric layer is formed on the side of the one surface of the second substrate. A lower electrode is formed on the ferroelectric layer, and the lower electrode and a first substrate are bonded via a bonding layer. A laser beam with a predetermined wavelength is irradiated from a side of other surface of the second substrate to transfer a ferroelectric film, which overlaps with the seed layer, of the ferroelectric layer and the seed layer onto the side of said one surface of the first substrate. The laser beam passes through the second substrate, is reflected by the seed layer, and is absorbed by a second portion of the ferroelectric layer. The second portion does not overlap with the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.