Irradiation assisted nucleation of quantum confinements by atomic layer deposition
US8551868B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 24, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.