Roughening method and method for manufacturing light-emitting diode having roughened surface
US8551869B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 21, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jan 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm2 or less to form a roughened surface. In addition, a method for manufacturing a light-emitting diode having a roughened surface is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.