Back-side contact formation

US8551882B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Florian Schmitt · Bonn, DE
• Michael Ziesmann · Hamburg, DE

Key dates

• Filing date: Jun 14, 2011
• Grant date: Oct 8, 2013
• Expiry date: Jul 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/00014
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment, a semiconductor is provided comprising a substrate and a plurality of wiring layers and dielectric layers formed on the substrate, the wiring layers implementing a circuit. The dielectric layers separate adjacent ones of the plurality of wiring layers. A first passivation layer is formed on the plurality of wiring layers. A first contact pad is formed in the layer and connected to the contact pad. A through silicon via (TSV) is formed through the substrate, the plurality of wiring and dielectric layers, and the passivation layer. The TSV is electrically connected to the wire formed on the passivation layer. The TSV is electrically isolated from the wiring layers except for the connection provided by the metal wire formed on the passivation layer.