Patent · US Active

Masking method

US8551883B2 · kind B2 · utility

0Cited by
2References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 15, 2010
Grant dateOct 8, 2013
Priority date
Expiry dateJun 7, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24802
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention relates to a method for masking a semiconductor substrate including the following steps: providing a planar semiconductor substrate having a first side and a second side lying opposite thereto, applying a mask to at least one of the sides, an extrusion printing method being used for applying the mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.