Quantum dot light emitting diode device and display device therewith
US8552416B2 · kind B2 · utility
11Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | May 25, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jun 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2101/40
Abstract
The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.