CMOS-compatible movable microstructure based devices
US8552464B2 · kind B2 · utility
0Cited by
5References
13Claims
0Family size
Inventor
Key dates
| Filing date | Apr 12, 2009 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Sep 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention addresses the aims and issues of making multi layer microstructures including “metal-shell-oxide-core” structures and “oxide-shell-metal-core” structures, and mechanically constrained structures and the constraining structures using CMOS (complimentary metal-oxide-semiconductor transistors) materials and layers processed during the standard CMOS process and later released into constrained and constraining structures by etching away those CMOS materials used as sacrificial materials. The combinations of possible constrained structures and methods of fabrication are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.