Semiconductor device
US8552497B2 · kind B2 · utility
0Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Nov 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.