Semiconductor pressure sensor
US8552513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2010 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Dec 11, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0054
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.