Solid-state image sensor and camera having image sensor with planarized insulative film
US8553125B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jul 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
Abstract
A solid-state image sensor having a pixel array area where a plurality of pixels are arranged, and a peripheral circuit area, each pixel including a photoelectric converter, and a transfer gate electrode which forms a channel for transferring charges generated by the photoelectric converter to a floating diffusion portion, comprises a first insulating film arranged to cover an upper surface of the photoelectric converter, at least part of an upper surface of the transfer gate electrode, and a side surface of the transfer gate electrode, a second insulating film arranged on a gate electrode of a MOS transistor arranged in the peripheral circuit area, and an interlayer insulating film arranged in contact with the first insulating film and the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.