Patent · US Active

Magnetic element with improved stability and including at least one antiferromagnetic tab

US8553369B2 · kind B2 · utility

11Cited by

10References

20Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Dion Song · Eden Prairie, US
Mark William Covington · Edina, US
Qing He · Plymouth, US
Dimitar V. Dimitrov · Edina, US
Wei Tian · Bloomington, US
Wonjoon Jung · Eden Prairie, US
Sunita Gangopadhyay · Chanhassen, US

Key dates

Filing date	Nov 30, 2010
Grant date	Oct 8, 2013
Priority date	—
Expiry date	Oct 1, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG11B2005/3996
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with various embodiments, the magnetic element includes a magnetically responsive stack or lamination with a first areal extent. The stack includes a spacer layer positioned between first and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to the first free layer on a surface thereof opposite the spacer layer, the AFM tab having a second areal extent that is less than the first areal extent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.