Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
US8554161B2 · kind B2 · utility
2Cited by
24References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2010 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Dec 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.