High efficiency power amplifier
US8554162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Mar 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45638
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier circuit utilizes a cross-coupled tapped cascade topology together with a technique of applying an RF injection current into a wideband node to provide a single-stage power amplifier with improved PAE, output power, and gain over a wide RF band. The amplifier circuit comprises a cross-coupled cascade transistor unit comprising a pair of cross-coupled cascode transistors, a cross-coupled switching transistor unit comprising a pair of cross-coupled switching transistors, and an RF current generator. RF current generator generates a differential RF injection current, while switching transistor unit amplifies the injection current to generate an amplified injection current at the wideband node of the amplifier circuit and the cascode transistor unit further amplifies the injection current to generate the desired amplified signal at the output of the amplifier circuit. The output signal amplitude generally depends on the differential injection current and the supply voltage VDD applied to the power amplifier circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.