Reduced cycle time manufacturing processes for thick film resistive devices
US8557082B2 · kind B2 · utility
1Cited by
18References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Sep 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B2203/017
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process of forming a resistive device such as a load resistor or a heater is provided that includes forming a dielectric layer onto a substrate, a target, or an adjacent functional layer, wherein the dielectric layer in one form defines a single layer of dielectric tape. The dielectric tape is laminated to the substrate, the target, or the adjacent functional layer through a single predetermined cycle of pressure, temperature and time, and then a resistive layer is farmed on the dielectric layer, and a protective layer is formed over the resistive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.