Physical vapor deposition with phase shift
US8557088B2 · kind B2 · utility
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13References
12Claims
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Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Oct 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3444
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.